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J Phys Chem B. 2006 Aug 10;110(31):15275-83.

Optoelectronic switches based on wide band gap semiconductors.

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  • 1Faculty of Chemistry, Jagiellonian University, Ingardena 3, 30-060 Kraków, Poland.


Switching of photocurrent direction in semiconducting systems upon changes of the electrode potential or incident light wavelength was realized by a series of photoelectrodes covered with titania modified with pentacyanoferrate complexes, [Fe(CN)(5)L](n)(-) (L = NH(3), thiodiethanol, thiodipropanol). These materials were characterized by optical spectroscopy and electrochemistry. The structure of the surface complexes was modeled using simple quantum-chemical models. The electrodes described in this paper enable control of the photocurrent direction by two stimuli: Changing the wavelength or the photoelectrode potential easily switches the direction of photocurrent. The materials are different from those of similar characteristics studied by other authors: They are not composites comprising of two types of semiconductors but rather engineered uniform materials. The photocurrent switching phenomenon is an intrinsic feature resulting from a specific electronic structure of the surface-modified semiconductor.

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