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Nat Mater. 2006 Apr;5(4):291-7. Epub 2006 Mar 26.

Electronic structure origins of polarity-dependent high-TC ferromagnetism in oxide-diluted magnetic semiconductors.

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  • 1Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, USA.

Abstract

Future spintronics technologies based on diluted magnetic semiconductors (DMSs) will rely heavily on a sound understanding of the microscopic origins of ferromagnetism in such materials. Discoveries of room-temperature ferromagnetism in wide-bandgap DMSs hold great promise, but this ferromagnetism remains poorly understood. Here we demonstrate a close link between the electronic structures and polarity-dependent high-TC ferromagnetism of TM(2+):ZnO DMSs, where TM(2+) denotes 3d transition metal ions. Trends in ferromagnetism across the 3d series of TM(2+):ZnO DMSs predicted from the energies of donor- and acceptor-type excited states reproduce experimental trends well. These results provide a unified basis for understanding both n- and p-type ferromagnetic oxide DMSs.

PMID:
16565711
[PubMed - indexed for MEDLINE]
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