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Opt Lett. 2005 Oct 15;30(20):2808-10.

Mode-locked laser diode with an ultrafast integrated uni-traveling carrier saturable absorber.

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  • 1Electronics Laboratory (IfE), Swiss Federal Institute of Technology (ETH Zürich), Zürich, Switzerland.


A novel two-section integrated mode-locked laser diode (MLLD) with a separate ultrafast uni-traveling carrier (UTC) saturable absorber section and semiconductor optical amplifier gain section is demonstrated. The UTC absorber is composed of a thin p-InGaAsP absorbing layer and an intrinsic InGaAsP collecting layer. By confining the photoexcitation process to the thin highly doped absorbing layer, the diffusion-limited hole extraction process is greatly enhanced. The investigated MLLD produces 600 fs uncompressed optical pulses at a 42 GHz repetition rate.

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