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Chem Commun (Camb). 2005 Aug 21;(31):3995-7. Epub 2005 Jul 11.

GaS and GaSe nanowalls and their transformation to Ga2O3 and GaN nanowalls.

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  • 1Chemistry and Physics of Materials Unit and CSIR Centre of Excellence in Chemistry, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P. O., Bangalore, 540064, India.


Two-dimensional nanowalls of GaS and GaSe are obtained by thermal exfoliation around 900 degrees C, and transformed to Ga2O3 and GaN nanowalls upon reaction with air and ammonia respectively at 800 degrees C, while maintaining dimensional integrity.

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