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Nat Mater. 2005 Aug;4(8):589-92. Epub 2005 Jul 17.

Electronic devices based on purified carbon nanotubes grown by high-pressure decomposition of carbon monoxide.

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  • 1Department of Physics and Astronomy, University of Pennsylvania, Philadelphia 19104, USA.

Abstract

The excellent properties of transistors, wires and sensors made from single-walled carbon nanotubes (SWNTs) make them promising candidates for use in advanced nanoelectronic systems. Gas-phase growth procedures such as the high-pressure decomposition of carbon monoxide (HiPCO) method yield large quantities of small-diameter semiconducting SWNTs, which are ideal for use in nanoelectronic circuits. As-grown HiPCO material, however, commonly contains a large fraction of carbonaceous impurities that degrade the properties of SWNT devices. Here we demonstrate a purification, deposition and fabrication process that yields devices consisting of metallic and semiconducting nanotubes with electronic characteristics vastly superior to those of circuits made from raw HiPCO. Source-drain current measurements on the circuits as a function of temperature and backgate voltage are used to quantify the energy gap of semiconducting nanotubes in a field-effect transistor geometry. This work demonstrates significant progress towards the goal of producing complex integrated circuits from bulk-grown SWNT material.

PMID:
16030521
[PubMed]
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