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Science. 2004 Dec 10;306(5703):1910-3. Epub 2004 Nov 11.

Observation of the spin Hall effect in semiconductors.

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  • 1Center for Spintronics and Quantum Computation, University of California, Santa Barbara, CA 93106, USA.


Electrically induced electron-spin polarization near the edges of a semiconductor channel was detected and imaged with the use of Kerr rotation microscopy. The polarization is out-of-plane and has opposite sign for the two edges, consistent with the predictions of the spin Hall effect. Measurements of unstrained gallium arsenide and strained indium gallium arsenide samples reveal that strain modifies spin accumulation at zero magnetic field. A weak dependence on crystal orientation for the strained samples suggests that the mechanism is the extrinsic spin Hall effect.

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