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Science. 2004 Nov 5;306(5698):1005-9.

Enhancement of ferroelectricity in strained BaTiO3 thin films.

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  • 1Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA.

Abstract

Biaxial compressive strain has been used to markedly enhance the ferroelectric properties of BaTiO3 thin films. This strain, imposed by coherent epitaxy, can result in a ferroelectric transition temperature nearly 500 degrees C higher and a remanent polarization at least 250% higher than bulk BaTiO3 single crystals. This work demonstrates a route to a lead-free ferroelectric for nonvolatile memories and electro-optic devices.

PMID:
15528439
[PubMed]
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