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Phys Rev Lett. 2004 Jan 23;92(3):036804. Epub 2004 Jan 22.

Intrinsic electron accumulation at clean InN surfaces.

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  • 1Department of Physics, University of Warwick, Coventry, CV4 7AL, United Kingdom.

Abstract

The electronic structure of clean InN(0001) surfaces has been investigated by high-resolution electron-energy-loss spectroscopy of the conduction band electron plasmon excitations. An intrinsic surface electron accumulation layer is found to exist and is explained in terms of a particularly low Gamma-point conduction band minimum in wurtzite InN. As a result, surface Fermi level pinning high in the conduction band in the vicinity of the Gamma point, but near the average midgap energy, produces charged donor-type surface states with associated downward band bending. Semiclassical dielectric theory simulations of the energy-loss spectra and charge-profile calculations indicate a surface state density of 2.5 (+/-0.2)x10(13) cm(-2) and a surface Fermi level of 1.64+/-0.10 eV above the valence band maximum.

PMID:
14753893
[PubMed]
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