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Phys Rev Lett. 2000 Nov 20;85(21):4562-5.

Origin of antimony segregation in GaInSb/InAs strained-layer superlattices

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  • 1Department of Physics, Texas A&M University, College Station, Texas 77843, USA.


We show how cross-sectional scanning tunneling microscopy may be used to reconstruct the Sb segregation profiles in GaInSb /InAs strained-layer superlattices. These profiles are accurately described by a one-dimensional model parametrizing the spatial evolution of an Sb seed at the InAs-on-GaInSb interface in terms of two-anion-layer exchange. We argue that the segregation seed, which decreases from 2 / 3 to 1 / 2 monolayer when growth conditions are made less anion rich, has its origin in the Sb-bilayer reconstruction maintained during GaInSb epitaxy.

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