delta -function-shaped Sb-doping profiles in Si(001) obtained using a low-energy accelerated-ion source during molecular-beam epitaxy
Phys Rev B Condens Matter
.
1992 Sep 15;46(12):7551-7558.
doi: 10.1103/physrevb.46.7551.
Authors
W Ni
,
GV Hansson
,
J Sundgren
,
L Hultman
,
LR Wallenberg
,
J Yao
,
LC Markert
,
JE Greene
PMID:
10002494
DOI:
10.1103/physrevb.46.7551
No abstract available