PMC

SiGe(004) reflection acquired in a nanodiffraction experiment on SiGe/Si(001) DMs. The 2D detector frame shows the crystal truncation rod (CTR) of the (001) surface and the diffuse intensity with positional correlation peaks around the SiGe(004) reflection (SiGe).

Internal displacement field and simulated beam path within SiGe DMs.(a) depicts the x-component of the internal displacement field within SiGe DMs and the Si substrate. (b) shows the output of the weighting values w_nfor each scatterer n of the material in our model.

Displacement field within InGaAs QDMs and related X-ray nanodiffraction simulation.(a) shows the vertical slice through the x-component of the displacement field within In_0.3Ga_0.7As/GaAs QDMs calculated by FEM and the corresponding scattering simulation near the GaAs(004) and InGaAs(004) reflections. (b) shows a comparable slice like that of (a) but after removing all 3D data of the InGaAs QDMs directly before running the scattering simulations shown below. The FEM strain field calculations have been performed before cropping the model data.

X-ray nanospot simulation of a scan over a SiGe DMs.(a) shows the beam spot positions given by the weighting factors w_nwithin the plane of the modelled sample surface. The SiGe dots (red) grown around a pit (grey) are also sketched within (a). Weighting factors w_nmultiplied by the y-component of the internal displacement field are shown in (b) and reveal the parts of the displacement field that are contributing to the simulation. (c) shows the simulated diffraction image near SiGe(004) reflection at the corresponding spot position shown in (a).

X-ray beam focused by nanofocusing lenses.(a) shows the illumination function of an X-ray beam which has been obtained by X-ray ptychography prior to a nanofocus diffraction experiment []. The image of the illumination function depicts a cross section of the amplitude and phase within the focal plane of the beam and, thus, determines the final spot profile at the sample surface. HA and VA indicate side oscillations due to the lens apertures. (b) is a projection of the intensity distribution of the illumination function to the horizontal axis (dotted line in (a)).

X-ray nanospot simulation of a scan over a SiGe island.(a) shows the spot position images, represented by the weighting values w_n, whereas in (b), the product of w_nwith the y-component of the internal displacement field is depicted (see text for explanation). (c) shows the corresponding RSM simulations near SiGe(004) and the comparison with experimental results (d). The Si substrate reflection has been blocked by a beam stop. Individually excited crystal truncation rods of SiGe(111) side facets can be seen in simulation (c) and measurement (d).

Sketch of the geometrical situation and variable definitions.p₁,p₂are the beam profile pixel coordinates; α₁and α₂are the beam incidence and exit angles with related azimuth angles βand γ. d₁,d₂are the detector pixel coordinates, and r₀=(x₀), y₀, z₀) is the reference point of the spot center at the sample surface (a). A 2D sketch of the situation in reciprocal space for the (004) reflection is shown in (b). Therein, k₁, k₂are the wave vectors, q is the scattering vector, and the 2D detector (blue line) stands orthogonally to the sketch (which is the [] direction).