PMC

All measurements are made with 1 M KCl buffer in cis chamber and 10 mM KCl buffer in trans chamber, voltage of 3 V and 1.4 nM pUC19 DNA. a, Simultaneous recording of the total ionic current and three nanowire-nanopore FET conductance channels. b, Higher-resolution view of the multiplexed recording from dashed rectangular area in panel a. The dashed red trace in the upper panel corresponds to the reconstructed ionic current trace (offset 10 nA for clarity) calculated from the three FET traces.

Left panels of a–c: a, Simultaneously recorded ionic current and FET conductance signals with both chambers filled with 1 M KCl buffer, voltage 0.6 V and 6 nM pUC 19 dsDNA in the cis chamber. b, Simultaneously recorded ionic current and FET conductance signals at 2 V voltage. c, Simultaneously recorded ionic current and FET conductance signals at 2.4 V voltage. Measurements in panel b and c were carried out with a trans chamber KCl buffer concentration of 10 mM, cis chamber KCl buffer concentration of 1 M and 1.4 nM pUC19 DNA. Right panels of a–c are zoom-in views of single ionic current and FET conductance events at the time indicated by black arrows on the ionic current traces of the corresponding left panels.

a, Schematic of the sensing circuit. b, Equivalent circuit diagram of a. SiNW stands for silicon nanowire in a and b. c, Calculated potential change at the nanopore opening in the trans chamber, by , due to one dsDNA molecule translocation at 1 V voltage as a function of nanopore diameter and cis / trans chamber buffer concentration ratio. d, Calculated potential change distribution in trans chamber for a 10 nm diameter nanopore at 1 V voltage by equation . e, Experimental values of the FET signal (black data points) and FET signal / ionic current signal ratio (red data points) under different voltages.

a, Schematic of the nanowire-nanopore measurement setup. Inset: Zoom-in view around the nanopore. b, High-resolution TEM image of a silicon nanowire with the nanopore off-axis at the nanowire edge; scale bar = 10 nm. Inset: A larger scale TEM image of a nanowire-nanopore FET device showing the central silicon nanowire connected to darker NiSi contacts, which are indicated by the white dashed line. The region where the high-resolution TEM image was recorded is indicated by the yellow dashed square. Scale bar = 50 nm. c, SGM image of a Si nanowire-nanopore device recorded with the tip voltage at −10 V. Scale bar = 1 µm. The nanopore position is indicated by the open black circle, the Ni contacts are indicated by white dashed lines and the nanowire between the two contacts is indicated by the black dashed line. Inset: AFM topographic image of this device, where the SGM image area is indicated by the white dotted square. The colour scale (−100 – 200 nS) corresponds to the conductance change. d, Scanning gate sensitivity profile of the same device before and after nanopore formation, where the profile was taken along the black dashed line in panel C, and averaged over ~100 nm width perpendicular to the dashed line.