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Nanoscale Res Lett. 2013; 8(1): 419.
Published online Oct 22, 2013. doi:  10.1186/1556-276X-8-419
PMCID: PMC3853228

Retraction: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface

Retraction

This article is retracted.

The journal editors would like to apologise for the early publication of the original article [1], which is being retracted as it was published prior to the completion of essential revisions.

References

  • Prakash A, Maikap S, Chiu HC, Tien TC, Lai CS. Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface. Nanoscale Research Letters. 2013;8:288. doi: 10.1186/1556-276X-8-288. [PMC free article] [PubMed] [Cross Ref]

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