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1.
Figure 4

Figure 4. From: Formation mechanisms of nano and microcones by laser radiation on surfaces of Si, Ge, and SiGe crystals.

Dynamics of nanocones formation by laser radiation in intrinsic semiconductors. (1–8) Schematic images of dynamics of nanocones formation by laser radiation in intrinsic semiconductors.

Artur Medvid, et al. Nanoscale Res Lett. 2013;8(1):264-264.
2.
Figure 9

Figure 9. From: Formation mechanisms of nano and microcones by laser radiation on surfaces of Si, Ge, and SiGe crystals.

SEM image of single microcone and its photoluminescence spectrum. SEM image of single Si microcone with nanowires (a) and photoluminescence spectrum of microcones (b).

Artur Medvid, et al. Nanoscale Res Lett. 2013;8(1):264-264.
3.
Figure 3

Figure 3. From: Formation mechanisms of nano and microcones by laser radiation on surfaces of Si, Ge, and SiGe crystals.

AFM image of irradiated semiconductor surfaces. 3D AFM image of Ge surface irradiated by Nd:YAG laser at intensity 7.0 MW/cm2.

Artur Medvid, et al. Nanoscale Res Lett. 2013;8(1):264-264.
4.
Figure 7

Figure 7. From: Formation mechanisms of nano and microcones by laser radiation on surfaces of Si, Ge, and SiGe crystals.

SEM image of Ni/Si surface irradiated by Nd:YAG laser. SEM image of Ni/Si structure after irradiation with Nd:YAG laser with three laser pulses.

Artur Medvid, et al. Nanoscale Res Lett. 2013;8(1):264-264.
5.
Figure 5

Figure 5. From: Formation mechanisms of nano and microcones by laser radiation on surfaces of Si, Ge, and SiGe crystals.

A photo of real sample of Ni/Si structure after irradiation by Nd:YAG laser. A photo of real sample of Ni/Si structure after irradiation by Nd:YAG laser. The black areas contain microcones formed by laser radiation.

Artur Medvid, et al. Nanoscale Res Lett. 2013;8(1):264-264.
6.
Figure 6

Figure 6. From: Formation mechanisms of nano and microcones by laser radiation on surfaces of Si, Ge, and SiGe crystals.

SEM images of Ni/Si surface irradiated by Nd:YAG laser. SEM images of Ni/Si surface irradiated by Nd:YAG laser at intensity 4.5 MW/cm2: 3 laser pulses per point (a), 10 laser pulses per point (b), and 22 laser pulses per point (c).

Artur Medvid, et al. Nanoscale Res Lett. 2013;8(1):264-264.
7.
Figure 1

Figure 1. From: Formation mechanisms of nano and microcones by laser radiation on surfaces of Si, Ge, and SiGe crystals.

Schematic image of a nanocone and a calculated band gap structure of Si. A schematic image of a nanocone with a gradually increasing band gap from a substrate up to the tip of cones (a) and a calculated band gap structure of Si as function of the nanowire’s diameter (b).

Artur Medvid, et al. Nanoscale Res Lett. 2013;8(1):264-264.
8.
Figure 8

Figure 8. From: Formation mechanisms of nano and microcones by laser radiation on surfaces of Si, Ge, and SiGe crystals.

Reflection spectra of Si surface with microcones. The reflection spectra of Si: curve 1, Si single crystal; curves 2 and 3, Si with microcones formed by 1,600 and 2,000 number of the laser pulses, respectively. Angle of incidence is 90°.

Artur Medvid, et al. Nanoscale Res Lett. 2013;8(1):264-264.
9.
Figure 2

Figure 2. From: Formation mechanisms of nano and microcones by laser radiation on surfaces of Si, Ge, and SiGe crystals.

Current–voltage characteristics of Ge sample and plot of d(V) / d(ln J) and H(J).I-V characteristics (curve 1) before and after irradiation (curve 2) by Nd:YAG laser at intensity I = 1.15 MW/cm2 and wavelength λ = 266 nm. (1, A) Plot of d(V) / d(ln J) and H(J) depending on current density J according to [21].

Artur Medvid, et al. Nanoscale Res Lett. 2013;8(1):264-264.

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