Display Settings:

Items per page

Results: 7

1.
Figure 6

Figure 6. From: Effects of post-deposition annealing ambient on band alignment of RF magnetron-sputtered Y2O3 film on gallium nitride.

Comparison ofJ-E characteristics of Al/Y2O3/IL/GaN-based MOS capacitors.

Hock Jin Quah, et al. Nanoscale Res Lett. 2013;8(1):53-53.
3.
Figure 4

Figure 4. From: Effects of post-deposition annealing ambient on band alignment of RF magnetron-sputtered Y2O3 film on gallium nitride.

Conduction band offset and barrier height for samples annealed in different ambients.

Hock Jin Quah, et al. Nanoscale Res Lett. 2013;8(1):53-53.
4.
Figure 7

Figure 7. From: Effects of post-deposition annealing ambient on band alignment of RF magnetron-sputtered Y2O3 film on gallium nitride.

Experimental data fitted well with FN tunneling model. Experimental data (symbol) of samples annealed in O2, Ar (HJQ and KYC, unpublished work), and FG ambient fitted well with FN tunneling model (line).

Hock Jin Quah, et al. Nanoscale Res Lett. 2013;8(1):53-53.
5.
Figure 2

Figure 2. From: Effects of post-deposition annealing ambient on band alignment of RF magnetron-sputtered Y2O3 film on gallium nitride.

XPS O 1s energy loss and valence band photoelectron spectrum. (a) Typical XPS O 1s energy loss spectrum of Y2O3 and interfacial layer for the sample annealed in O2 ambient. (b) Typical valence band spectrum of Y2O3 and interfacial layer for the sample annealed in O2 ambient.

Hock Jin Quah, et al. Nanoscale Res Lett. 2013;8(1):53-53.
6.
Figure 5

Figure 5. From: Effects of post-deposition annealing ambient on band alignment of RF magnetron-sputtered Y2O3 film on gallium nitride.

Schematic diagram showing the energy band alignment of the Y2O3/IL/GaN system. Energy band alignment of the Y2O3/IL/GaN system for the sample annealed in (a) oxygen, (b) argon and forming gas, and (c) nitrogen ambient.

Hock Jin Quah, et al. Nanoscale Res Lett. 2013;8(1):53-53.
7.
Figure 3

Figure 3. From: Effects of post-deposition annealing ambient on band alignment of RF magnetron-sputtered Y2O3 film on gallium nitride.

Bandgap and valence band offset of Y2O3 and interfacial layer. (a) Bandgap of Y2O3 and IL for the sample annealed in different ambients. (b) Valence band offset of Y2O3/GaN and IL/GaN as a function of post-deposition annealing ambient.

Hock Jin Quah, et al. Nanoscale Res Lett. 2013;8(1):53-53.

Display Settings:

Items per page

Supplemental Content

Recent activity

Your browsing activity is empty.

Activity recording is turned off.

Turn recording back on

See more...
Write to the Help Desk