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Results: 5

1.
Figure 2

Figure 2. From: Theoretical and experimental studies of (In,Ga)As/GaP quantum dots.

QD morphologies used for the eight-band k·p calculations.

Cedric Robert, et al. Nanoscale Res Lett. 2012;7(1):643-643.
2.
Figure 4

Figure 4. From: Theoretical and experimental studies of (In,Ga)As/GaP quantum dots.

Temperature-dependent PL spectra of (In,Ga)As/GaP QDs. The black thin dashed lines show the fit of the two transitions by two Gaussian peaks.

Cedric Robert, et al. Nanoscale Res Lett. 2012;7(1):643-643.
3.
Figure 1

Figure 1. From: Theoretical and experimental studies of (In,Ga)As/GaP quantum dots.

(In,Ga)As QD image and statistical correlation. (a) A 75 × 75-nm2 STM 3D plane view of (In,Ga)As QDs. (b) Statistical correlation between diameter and height on a 800 × 800-nm2 image.

Cedric Robert, et al. Nanoscale Res Lett. 2012;7(1):643-643.
4.
Figure 5

Figure 5. From: Theoretical and experimental studies of (In,Ga)As/GaP quantum dots.

PL dynamics at 10 K at selected energies, LE and HE. For power densities of (a) 70 and (b, c) 4,000 W·cm−2. Red lines show biexponential fits.

Cedric Robert, et al. Nanoscale Res Lett. 2012;7(1):643-643.
5.
Figure 3

Figure 3. From: Theoretical and experimental studies of (In,Ga)As/GaP quantum dots.

Influence of In content and QD geometry on the electronic levels. (a) Electronic levels of InxGa1−xAs QD with geometry C. (b) Electronic levels of In0.3Ga0.7As QDs for the four geometries defined in Figure 2. The Γ electronic level and the heavy-hole level in the QD are calculated with the k·p method. The X and L electronic levels are calculated with the TB model.

Cedric Robert, et al. Nanoscale Res Lett. 2012;7(1):643-643.

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