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Results: 5

1.
Figure 2

Figure 2. From: Two-stage model of nanocone formation on a surface of elementary semiconductors by laser radiation.

SEM image of Si with deposited Cu. SEM image of electrochemically deposited Cu lines on p-Si irradiated by Nd:YAG laser.

Artur Medvid, et al. Nanoscale Res Lett. 2012;7(1):428-428.
2.
Figure 5

Figure 5. From: Two-stage model of nanocone formation on a surface of elementary semiconductors by laser radiation.

Schematic illustration of n-p-i structure. Schematic illustration of n-p-i structure formed by Nd:YAG laser radiation on the surface of i-Ge crystal.

Artur Medvid, et al. Nanoscale Res Lett. 2012;7(1):428-428.
3.
Figure 1

Figure 1. From: Two-stage model of nanocone formation on a surface of elementary semiconductors by laser radiation.

AFM image of irradiated semiconductor surfaces. 3D AFM image of Ge surface irradiated by Nd:YAG laser at intensity of 7.0 MW/cm2.

Artur Medvid, et al. Nanoscale Res Lett. 2012;7(1):428-428.
4.
Figure 3

Figure 3. From: Two-stage model of nanocone formation on a surface of elementary semiconductors by laser radiation.

Current-voltage characteristics of Ge samples. Current-voltage characteristics of a non-irradiated and an irradiated i-Ge sample by Nd:YAG laser with different intensities at λ = 266 nm and 350 laser pulses.

Artur Medvid, et al. Nanoscale Res Lett. 2012;7(1):428-428.
5.
Figure 4

Figure 4. From: Two-stage model of nanocone formation on a surface of elementary semiconductors by laser radiation.

Rectification ratio for p-n junctions formed by different laser parameters. Rectification ratio as a function of irradiation intensity of Nd:YAG laser for different wavelengths of the laser radiation and 350 laser pulses.

Artur Medvid, et al. Nanoscale Res Lett. 2012;7(1):428-428.

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