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1.
Figure 5

Figure 5. From: Effect of etching time on morphological, optical, and electronic properties of silicon nanowires.

Schematic illustration of the LBIC technique.

Nesma Nafie, et al. Nanoscale Res Lett. 2012;7(1):393-393.
2.
Figure 2

Figure 2. From: Effect of etching time on morphological, optical, and electronic properties of silicon nanowires.

Cross-section SEM images of formed SiNWs at different durations.

Nesma Nafie, et al. Nanoscale Res Lett. 2012;7(1):393-393.
3.
Figure 3

Figure 3. From: Effect of etching time on morphological, optical, and electronic properties of silicon nanowires.

Variation of the length of SiNWs films vs. etching time.

Nesma Nafie, et al. Nanoscale Res Lett. 2012;7(1):393-393.
4.
Figure 8

Figure 8. From: Effect of etching time on morphological, optical, and electronic properties of silicon nanowires.

Schematic illustration of the MIS diode when the SiNWs film is homogeneous and not.

Nesma Nafie, et al. Nanoscale Res Lett. 2012;7(1):393-393.
5.
Figure 7

Figure 7. From: Effect of etching time on morphological, optical, and electronic properties of silicon nanowires.

Obtained values of the diffusion length vs. etching time.

Nesma Nafie, et al. Nanoscale Res Lett. 2012;7(1):393-393.
6.
Figure 1

Figure 1. From: Effect of etching time on morphological, optical, and electronic properties of silicon nanowires.

Top SEM views of one sample. (a) Before, and (b) after removing the silver film.

Nesma Nafie, et al. Nanoscale Res Lett. 2012;7(1):393-393.
7.
Figure 6

Figure 6. From: Effect of etching time on morphological, optical, and electronic properties of silicon nanowires.

Typical normalized LBIC profiles. Vertical dash line corresponds to the metal position on the top of the MIS structure.

Nesma Nafie, et al. Nanoscale Res Lett. 2012;7(1):393-393.
8.
Figure 4

Figure 4. From: Effect of etching time on morphological, optical, and electronic properties of silicon nanowires.

Total reflectivity spectra of all SiNWs films in the 250 to 1,250 nm wavelength range. The inset is the total reflectivity of untreated silicon surface.

Nesma Nafie, et al. Nanoscale Res Lett. 2012;7(1):393-393.

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