Results: 3

1.
Figure 1

Figure 1. From: Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111)/Si(111).

D2-TPD spectra of SiC thin film on Si(A), after annealing at 1,273 K(B), 1,423 K(C), 1,523 K(D), respectively

Shunsuke Abe, et al. Nanoscale Res Lett. 2010;5(12):1888-1891.
2.
Figure 2

Figure 2. From: Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111)/Si(111).

Raman spectra of SiC thin film on Si, after annealing at (i) 1,273 K (sample B), (ii) 1,423 K (sample C), (iii) 1,523 K (sample D), respectively

Shunsuke Abe, et al. Nanoscale Res Lett. 2010;5(12):1888-1891.
3.
Figure 3

Figure 3. From: Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111)/Si(111).

Cls core-level spectra of SiC thin film on Si, after annealing at (i) 1,273 K (sample B), (ii) 1,423 K (Sample C), (iii) 1,523 K (sample D) annealing, respectively

Shunsuke Abe, et al. Nanoscale Res Lett. 2010;5(12):1888-1891.

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